Impact of grown-in point-defects on the minority carrier lifetime in Czochralski-grown silicon wafers

Thermal deactivation of lifetime- limiting grown-in point defects in n-type Czochralski silicon wafers

Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering

(2016) Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering. Copyright and reuse: The Warwick Research Archive Portal (WRAP) makes this work of researchers of the University of Warwick available open access under the following conditions. This article is made available under the Creative Commons Attribution 4.0 International license (CC...

Measuring dopant concentrations in p-type silicon using iron-acceptor pairing monitored by band-to-band photoluminescence

This paper introduces a photoluminescence-based technique for determining the acceptor concentration in silicon wafers by measuring the formation rate of iron-acceptor pairs. This rate is monitored by bandto-band photoluminescence in low injection, the intensity of which is proportional to the carrier lifetime. The technique is demonstrated with an iron-implanted float zone silicon wafer, heavi...

Defect Engineering During Czochralski Crystal Growth and Silicon Wafer Manufacturing

Single crystal silicon has played the fundamental role in electronic industry since the second half of the 20th century and still remains the most widely used material. Electronic devices and integrated circuits are fabricated on single-crystal silicon wafers which are produced from silicon crystals grown primarily by the Czochralski (CZ) technique. Various defects are formed in the growing cry...

Effect of Oxygen in Low Temperature Boron and Phosphorus Diffusion Gettering of Iron in Czochralski-Grown Silicon

Low temperature boron and phosphorous diffusion gettering (BDG and PDG) of iron in Czochralski-grown silicon were experimentally studied. Differences and similarities between the gettering techniques were clarified by using intentionally iron contaminated wafers emphasizing especially the effect of oxygen. Experiments showed that the surprisingly high gettering effects of BDG could be explained...